30NM60ND TO-220

STF30NM60ND STF30NM60N F30NM60ND 30NM60ND TO-220

Specification:

• Type Designator: STP30NM60ND
• Marking Code: 30NM60ND
• Type of Transistor: MOSFETType of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 190 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 25 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 25 A
• Maximum Junction Temperature (Tj): 150 °CTotal Gate Charge (Qg): 100 nC
• Rise Time (tr): 50 nS
• Drain-Source Capacitance (Cd): 200 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
• Package: TO-220